A ku band monolithic power amplifier for TT&C applications

Florian, C. ; Cignani, R. ; Vannini, G. ; Comparini, M.C. (2005) A ku band monolithic power amplifier for TT&C applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
Full text available as:
[thumbnail of GA052142.PDF]
Download (250kB) | Preview


The paper describes the design of a 38 dBm monolithic power amplifier at Ku band. The amplifier has to be used as the final stage of the downlink transmitter of a TT&C system. A commercial power p-HEMT process capable of handling a power density higher than 1 W/mm of active area has been selected for the amplifier design. The power capability of this process makes it possible to integrate in a monolithic chip the functionality up today supplied by hybrid modules. Since the circuit is a space product, the attention is focused on reliability issues; therefore performances have to be matched imposing the devices to work at de-rated conditions respect to the process maximum ratings. In this perspective, the device channel temperature becomes a very tight design objective and has to be carefully controlled by means of a thermal simulator. The paper describes the three dimensional thermal model built to predict the devices thermal behavior in the environment of a finite difference thermal simulator. The design of the circuit is also described from the specifications to the final layout.

Document type
Conference or Workshop Item (Paper)
Florian, C.
Cignani, R.
Vannini, G.
Comparini, M.C.
Deposit date
15 Feb 2006
Last modified
17 Feb 2016 14:25

Other metadata



Staff only: View the document