Abstract

An original approach based on a physical model is used to evaluate opto-microwave performances of avertically illuminated single strained layer SiGe HPT. Analysis of optomicrowave performance is presented at 940nm. The contribution of each regionon the dynamic performances is studied. Frequency response enhancement is shown for base optical detection first and also by wavelength analysis while maintaining whole component detection. Increases up to a 9. 8 factor for the transition optical frequency (fTopt)in phototransistor mode are presented, reaching respectively 19.7 GHz and 15.3 GHz.