Frequency response enhancement of a single strained layer SiGe phototransistor basedon physical simulations

Moutier, F. ; Polleux, J.L. ; Rumelhard, C. ; Schumacher, H. (2005) Frequency response enhancement of a single strained layer SiGe phototransistor basedon physical simulations. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract

An original approach based on a physical model is used to evaluate opto-microwave performances of avertically illuminated single strained layer SiGe HPT. Analysis of optomicrowave performance is presented at 940nm. The contribution of each regionon the dynamic performances is studied. Frequency response enhancement is shown for base optical detection first and also by wavelength analysis while maintaining whole component detection. Increases up to a 9. 8 factor for the transition optical frequency (fTopt)in phototransistor mode are presented, reaching respectively 19.7 GHz and 15.3 GHz.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Moutier, F.
Polleux, J.L.
Rumelhard, C.
Schumacher, H.
Subjects
DOI
Deposit date
15 Feb 2006
Last modified
17 Feb 2016 14:25
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