Abstract

A monolithic GaAs SPST (single pole single throw) switch with 3 floating MESFETS is presented. It was designed for 2 GHz operation and have low on-state insertion losses (~1.7dB) and high off-state isolation (50dB). From the comparison between measurements and simulations the best available nonlinear model for the floating bias operation was selected. Several resonant topologies were studied and a new topology is proposed to increase the off-state isolation without degrade the on-state insertion losses.