Abstract

This paper presents the BRITE-EURAM HERO'S project dedicated to the reliability improvement of InGaP/GaAs heterojunction bipolar transistor (HBT) for oscillator and power applications. The key actions are to allow the emergence of a European source of InGaP/GaAs MOCVD material (EPI - UK), to allow a better understanding of the mechanism involved in current gain degradation, to develop new pulsed current aging test, and to evaluate the impact of the device reliability improvement on the performance of X- and Ku Band oscillators and amplifiers.