Abstract

A new physical-based electrothermal model for GaAs MESFET is presented. The 2-D electrical model based on the accurate velocity-electric field Chang-Fetterman expression is coupled to a thermal simulator which is able to take into account the thermal dependence of GaAs thermal conductivity and the multilayer structure of a typical chip. The simulator has been compared with the results of a 3-D FDM simulator and measurements. The accuracy is to be considered satisfactory and the CAD tool can easily perform the simulation on a common PC.