Abstract

A technology-independent,non-quasi-staticnon-linear model of electron devicescapableofaccuratepredictions at microwave and millimetrewavesisproposedin this paper. The model is based on thedefinitionofaquasi-staticassociated device, which is controlled by means ofequivalent voltages. In particular, in the paper it isshownhow to define and experimentally identify suitable voltage-controlled voltage sources, which modify the original domainof applied voltages and create a suitable control environment for the purely-quasi-static associated device. The advantage of this approach is that conventional purely quasi-static models can still be adopted even at very high frequencies, if suitable equivalent voltages are applied. Preliminary experimental validation of the approach is provided in the paper by means of a GaAs PHEMT.