Pulsed measurements of GaN MESFETs

Boudart, B. ; Trassaert, S. ; Gaquiere, C. ; Theron, D. ; Crosnier, Y. (1999) Pulsed measurements of GaN MESFETs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.
Full text disponibile come:
[thumbnail of GAAS_99_035.pdf]
Anteprima
Documento PDF
Download (1MB) | Anteprima

Abstract

GaN MESFETs were realized and then static and pulsed measurements were performed for two different lighting and temperature conditions. So, the existence of electrical traps associated with the surface states in GaN MESFETs was demonstrated. Hyperfrequency pulsed measurements were also performed to determine the maximum stable gain for different quiescent bias voltages and temperatures. This gain was found to increase with temperature.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Boudart, B.
Trassaert, S.
Gaquiere, C.
Theron, D.
Crosnier, Y.
Settori scientifico-disciplinari
DOI
Data di deposito
15 Feb 2006
Ultima modifica
17 Feb 2016 14:27
URI

Altri metadati

Statistica sui download

Statistica sui download

Gestione del documento: Visualizza il documento

^