Pulsed measurements of GaN MESFETs

Boudart, B. ; Trassaert, S. ; Gaquiere, C. ; Theron, D. ; Crosnier, Y. (1999) Pulsed measurements of GaN MESFETs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

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Abstract

GaN MESFETs were realized and then static and pulsed measurements were performed for two different lighting and temperature conditions. So, the existence of electrical traps associated with the surface states in GaN MESFETs was demonstrated. Hyperfrequency pulsed measurements were also performed to determine the maximum stable gain for different quiescent bias voltages and temperatures. This gain was found to increase with temperature.

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