Abstract

This paper presents a novel measurement system for derivative extraction under dynamic conditions based on the utilization of pulsed signals. This kind of characterization avoids unrealistic heating and trapping effects, making possible to realize the extraction process under conditions as close as possible to the device RF behaviour. The system principles and set-up are presented and described in order to provide reliable device modelling. Moreover, results of the derivative extraction process for an FLL177ME MESFET are presented with the aim of highlighting the existing differences between pulsed and traditional DC derivative characterization.