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Kohn, E. ; Daumiller, I.
(1999)
High temperature performance of gan-based HFET's.
In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.
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Abstract
The technological building blocks for high temperature HFET devices are described. The RF characteristics are investigated by on-wafer testing up to 200°C and the DC characteristics are evaluated up to 850°C in vacuum. Permanent degradation is observed above 650°C. It is concluded, that the chemical stability of the heterostructure material itself may be mainly responsible for this limit.
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