High temperature performance of gan-based HFET's

Kohn, E. ; Daumiller, I. (1999) High temperature performance of gan-based HFET's. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.
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Abstract

The technological building blocks for high temperature HFET devices are described. The RF characteristics are investigated by on-wafer testing up to 200°C and the DC characteristics are evaluated up to 850°C in vacuum. Permanent degradation is observed above 650°C. It is concluded, that the chemical stability of the heterostructure material itself may be mainly responsible for this limit.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Kohn, E.
Daumiller, I.
Subjects
DOI
Deposit date
12 Dec 2005
Last modified
17 Feb 2016 14:28
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