Abstract

The challenge of the mass production of optoelectronic devices is to develop new technological process in order to reduce the number of steps and to improve the process yield. In particular, for the realisation of integrated photonic devices, the etching and the following (eventually selective) regrowth represent the most crucial technological steps. This paper overviews the recent technological advances in obtaining vertical and oblique sidewalls in both InP and GaInAsP/InP MQW laser structures partially masked with SiN into the MOCVD deposition chamber, by using chlorinated compounds. The optimized experimental conditions were applied to etch mesa stripes in a SCH-MQW laser structure, followed by lateral InP.Fe regrowth in the same step. Threshold current as low as 6 mA and differential quantum efficiency higher than 25% for SI-BH MQW laser have been achieved.