SiGe bipolar ICs with data rates from 40 to 60 Gb/s for future fiber-optic systems

Möller, M. ; Rein, H.-M. ; Gottwald, E. ; Meister, T.F. (1999) SiGe bipolar ICs with data rates from 40 to 60 Gb/s for future fiber-optic systems. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.
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Abstract

This paper gives a review on a chip-set of very-high-speed ICs for fiber-optic TDM systems re­alized in a SiGe bipolar laboratory technology. With the uncritical circuits like time-division multiplexer and demultiplexer record data rates of 60 Gb/s were achieved. But even the speed-critical modulator driver and transimpedance amplifier proved to be suited for operation at 40 Gb/s, if an adequate configuration of the TDM system is chosen. It should be noted, that all the experimental results presented, are measured on mounted chips, using conventional wire bonding.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Möller, M.
Rein, H.-M.
Gottwald, E.
Meister, T.F.
Settori scientifico-disciplinari
DOI
Data di deposito
12 Dic 2005
Ultima modifica
17 Feb 2016 14:28
URI

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