Möller, M. ; Rein, H.-M. ; Gottwald, E. ; Meister, T.F.
(1999)
SiGe bipolar ICs with data rates from 40 to 60 Gb/s for future fiber-optic systems.
In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.
Full text disponibile come:
Anteprima |
Documento PDF
Download (2MB) | Anteprima |
Abstract
This paper gives a review on a chip-set of very-high-speed ICs for fiber-optic TDM systems realized in a SiGe bipolar laboratory technology. With the uncritical circuits like time-division multiplexer and demultiplexer record data rates of 60 Gb/s were achieved. But even the speed-critical modulator driver and transimpedance amplifier proved to be suited for operation at 40 Gb/s, if an adequate configuration of the TDM system is chosen. It should be noted, that all the experimental results presented, are measured on mounted chips, using conventional wire bonding.
Abstract