Abstract

Classical large-signal device models are indirectly derived from small-signal S-parameter measurements. The recent availability of full two-port vectorial large-signal measurement systems has initiated the development of new techniques to enhance the ease and accuracy of non-linear transistor modelling. In this paper, we focus to two equivalent circuit based, or "grey" box, transistor modelling methods that are based on vectorial large-signal measurements. We show that the technique of parameter optimisation is interesting to generate fast and accurate non­linear models for particular applications. The direct extraction method is preferable to determine general non-linear models, but its efficiency is strongly related to the available measurement hardware.