Mitani, Y. ; Kasai, D. ; Horio, K.
(2002)
Analysis of Correlation between Breakdown Characteristics and Gate-Lag Phenomena in Narrowly-Recessed-Gate.
In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
Full text available as:
Preview |
PDF
Download (118kB) | Preview |
Abstract
Effects of surface states on breakdown and gate-lag phenomena in narrowly-recessed-gate GaAs MESFETs are studied by two-dimensional (2-D) analysis. It is shown that the breakdown voltage could be raised when moderate densities of surface states are included. However, in a case with relatively high densities of surface states, the breakdown voltage could be drastically lowered when introducing a narrowly-recessed-gate structure. It is suggested that there is a trade-off relationship between raising the breakdown voltage and reducing the gate-lag.
Abstract