A method for characterising frequency dispersion and thermal effects independently in GaAs FETs

Rodríguez Tellez, J. ; Mediavilla, A. ; Fernández, T. ; Tazón, A. (1999) A method for characterising frequency dispersion and thermal effects independently in GaAs FETs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

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Abstract

Static, pulsed and liquid crystal measurement results are presented for a 900um gate-width MESFET. The results indicate clearly that the device has a much slower thermal response time than was previously thought. The data indicate that the differences observed between the static and pulsed IV characteristics of the device are due to frequency dispersion and not to thermal effects, as is sometimes assumed.

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