AlGaN/GaN heterostructure field-effect transistors

Adesida, I. ; Ping, A. T. ; Redwing, J. (1999) AlGaN/GaN heterostructure field-effect transistors. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.
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Abstract

A brief overview of materials. Processing, technologies, and performance of AlGaN/GaN heterostructure field-effect transistors (HFETs) are presented. Sate-of-the-art results on the dc, microwave, power, and noise characteristics of these devices on sapphire and SiC substrates are discussed. It is evident that AlGaN/GaN HFETs will be used for high power applications at microwave frequencies in the future. It is also possible that these devices will find applications for low noise amplifiers.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Adesida, I.
Ping, A. T.
Redwing, J.
Settori scientifico-disciplinari
DOI
Data di deposito
15 Feb 2006
Ultima modifica
17 Feb 2016 14:29
URI

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