A 26-40 GHz on wafer intermodulation measurement system

Bué, F. ; Gaquiere, C. ; Crosnier, Y. ; Carnez, B. ; Quentin, P. (1999) A 26-40 GHz on wafer intermodulation measurement system. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

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Abstract

In this paper, a 26 - 40 GHz intermodulation measurement system is presented which permits intermodulation investigations together with load-pull measurements. The one-tone and two-tone responses of Ka PHEMT devices are compared. Inter Modulation Ratio (IMR) optimizations performed by adjusting the output load and bias settings show that it is possible to improve the IMR up to 5-6 dB at a constant output power level.

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