A new approach of the linear and non linear stability analysis of PHEMT based on a finger-distributed generic non linear model and electromagnetic deembedding

Laloue, A. ; Mallet-Guy, B. ; Mons, S. ; Laporte, E. ; Quéré, R. ; Soulard, M. (1999) A new approach of the linear and non linear stability analysis of PHEMT based on a finger-distributed generic non linear model and electromagnetic deembedding. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

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Abstract

Microwave transistor stability is a real preoccupation of MMICs designers. In this paper, it is shown that the classical electrical lumped model is inappropriate to the FET stability study. A non linear finger-distributed modeling technique, based on an electromagnetic deem bedding, is presented. The derived model exhibits a very interesting capability to predict the electrical behavior of arbitrary shaped transistor. It also brings a real improvement in the FET analysis study.

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