Reliability of RF-MEMS

Gaddi, Roberto ; Gnudi, Antonio ; Tazzoli, Augusto ; Meneghesso, Gaudenzio ; Zanoni, Enrico (2005) Reliability of RF-MEMS. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
Full text disponibile come:
[thumbnail of GA053040.PDF]
Anteprima
Documento PDF
Download (363kB) | Anteprima

Abstract

The continuously evolving MEMS technology for RF/microwave applications poses issues regarding new reliability and lifetime estimation. We will overview the most important degradation mechanisms concerning capacitive and ohmic RF-MEMS devices and their effects on the device lifetime. Preliminary results will also be given on ElectroStatic Discharge effects on ohmic shunt switches adopting a Transmission Line Pulse stress technique.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Gaddi, Roberto
Gnudi, Antonio
Tazzoli, Augusto
Meneghesso, Gaudenzio
Zanoni, Enrico
Settori scientifico-disciplinari
DOI
Data di deposito
15 Feb 2006
Ultima modifica
17 Feb 2016 14:30
URI

Altri metadati

Statistica sui download

Statistica sui download

Gestione del documento: Visualizza il documento

^