Abstract

This paper describes an original way of dealing with the measuring and modelling of microwave transistor nonlinear behavior. Although generalizations are possible, the method described in this particular paper deals with transistor behavior under a large signal one-tone excitation, with arbitrary impedance terminations for the fundamental and the harmonics. First the mathematical theory of the "nonlinear s-parameters " is described. Next the measurement set-up and the actual extraction of the model parameters is highlighted. Finally the model is implemented in a commercial harmonic balance simulator. Using the simulator, model verification is performed by comparing measured and modelled behavior.