Abstract

An analytical treatment for the stability of Resonant Tunneling devices is proposed. It exploits a previously proposed approach for Resonant Tunneling Diodes with the aim of deriving an effective guideline for the use of such class of devices in MMIC applications. The discussion is carried out on a class of devices deriving from the integration of Heterojunction Interband Tunneling Diodes (HITD) with HEMTs on an InP substrate, for different cases of device parameters uncertainty and circuit topologies. Preliminary simulations and experimental validation results are provided in the paper.