AlGaAs/GaAs HFET power devices for J-band applications: performance dependence on gate recess geometry

Lanzieri, C. ; Menozzi, R. ; Dieci, D. ; Peroni, M. ; Cetronio, A. ; Canali, C. (1998) AlGaAs/GaAs HFET power devices for J-band applications: performance dependence on gate recess geometry. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

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Abstract

We show in this work that Alo.25Gao.75/GaAs power HFETs can offer substantial performance improvement at J-Band over conventional GaAs power MESFET's with the same geometry. Further performance enhancement is offered by a non-lithographic gate etching technique able to downscale the gate length to 0.3 urn. The paper will discuss the advantages and possible limitations of this gate scaling process; in addition, evidence will be given of the good hot-electron reliability of these devices.

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