Abstract

An In0.3Al0.7As/In0.3Ga0.7As metamorphic power High Electron Mobility Transistor (HEMT) grown on GaAs has been developed. This structure with 30% indium content presents several advantages over PM-HEMT on GaAs and LM-HEMT on InP. A 0.15-um gate length device with a single S doping exhibits a current gain cut off frequency Ft value of 125 GHz at Vds = 1.5 V, an extrinsic transconductance of 650 mS/mm and a current density of 750 mA/mm associated to a high breakdown voltage of-13 V. Power measurements performed at 60 GHz demonstrate a maximum output power of 240 mW/mm with 6.4 dB power gain and a power added efficiency (PAE) of 25%. These are the first power results ever reported on any metamorphic HEMT.