Zaknoune, M. ; Cordier, Y. ; Bollaert, S. ; Theron, D. ; Crosnier, Y.
(1998)
Power performance capability of metamorphic HEMT on GaAs substrate.
In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.
Full text available as:
Abstract
An In0.3Al0.7As/In0.3Ga0.7As metamorphic power High Electron Mobility Transistor (HEMT) grown on GaAs has been developed. This structure with 30% indium content presents several advantages over PM-HEMT on GaAs and LM-HEMT on InP. A 0.15-um gate length device with a single S doping exhibits a current gain cut off frequency Ft value of 125 GHz at Vds = 1.5 V, an extrinsic transconductance of 650 mS/mm and a current density of 750 mA/mm associated to a high breakdown voltage of-13 V. Power measurements performed at 60 GHz demonstrate a maximum output power of 240 mW/mm with 6.4 dB power gain and a power added efficiency (PAE) of 25%. These are the first power results ever reported on any metamorphic HEMT.
Abstract
An In0.3Al0.7As/In0.3Ga0.7As metamorphic power High Electron Mobility Transistor (HEMT) grown on GaAs has been developed. This structure with 30% indium content presents several advantages over PM-HEMT on GaAs and LM-HEMT on InP. A 0.15-um gate length device with a single S doping exhibits a current gain cut off frequency Ft value of 125 GHz at Vds = 1.5 V, an extrinsic transconductance of 650 mS/mm and a current density of 750 mA/mm associated to a high breakdown voltage of-13 V. Power measurements performed at 60 GHz demonstrate a maximum output power of 240 mW/mm with 6.4 dB power gain and a power added efficiency (PAE) of 25%. These are the first power results ever reported on any metamorphic HEMT.
Document type
Conference or Workshop Item
(Paper)
Creators
Subjects
DOI
Deposit date
16 Feb 2006
Last modified
17 Feb 2016 14:32
URI
Other metadata
Document type
Conference or Workshop Item
(Paper)
Creators
Subjects
DOI
Deposit date
16 Feb 2006
Last modified
17 Feb 2016 14:32
URI
Downloads
Downloads
Staff only:
