Abstract

In this contribution a MESFET equivalent circuit that takes into account the device’s non-quasi-static (NQS) effects is presented. The model topology is deduced directly from the small-signal measurement analysis and consists of a small-signal equivalent circuit that can be obtained from the linearization of a non-linear NQS model with non-linear state-functions (terminal charges and currents) that include a single relaxation-time. Results confirm that just one relaxation-time for all components is needed. The proposed model provides small-signal simulation performance similar to conventional models, but incorporating NQS effects in a consistent way and using just a reduced number of non-linear functions.