Abstract

A variety of RF and microwave electronic devices can be fabricated from SiC. MESFET's and SIT's fabricated from 4H-SiC grown on 6H- or 4H-SiC substrates with very good dc and RF performance have been demonstrated. These devices are being developed for microwave power amplifiers for short pulse, high power RADAR applications at C, S, and X-bands, and for communications amplifiers for base station transmitters at L and S band. These devices have the potential to produce RF power densities in excess of that possible from Si or GaAs based devices, with power-added efficiency approaching theoretical limits for class A and B operation. SiC MESFET's can produce RF power density on the order of 4 W/mm and experimental devices are rapidly approaching the theoretical potential.