J-band 16 watt HFET amplifier module for very high power applications

Calori, M. ; Graffitti, R. ; Marescialli, L . ; Proietti, C. (1998) J-band 16 watt HFET amplifier module for very high power applications. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

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Abstract

In this work we report on the design and construction of a three stage J-band (10-10.5 GHz) high power amplifier based on 0.4 um gate-length HFET devices. In particular we will demonstrate that by means of a Micro Hybrid Integrated Circuits (MHIC) approach, power amplifier with Pout=16 W, Gass=19 dB @ ldBc and n|=27% can be routinely achieved.

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