Abstract

A complete procedure for the extraction of non-linear empirical models for MESFET's and HEMT's has been developed. The procedure requires DC and small signal S-parameters measurements to find model elements, and no cold measurements are needed for extrinsic parameters determination. The proposed procedure is able to deal with non-linear models characterised by low-frequency dispersion. The optimisation step aimed to determine the linear circuit model uses a multi-bias extraction. A software tool has been developed to check the algorithms and average errors of 4.8% for DC drain current and 8.4% for S-parameters have been obtained up to 5OGHz for a P-HEMT from PHILIPS PML-D02AH monolithic process.