Scaling non linear models for low gm MESFETS

Cordeiro, Jean-Philippe ; Costa Freire, J. (1998) Scaling non linear models for low gm MESFETS. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

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Abstract

A new technique to scale down non linear Models for small gate width MESFETs is presented. The model is obtained from a larger device model scaled only on the total gate width and adjusting two DC parameters and three AC parameters to the measurements on typical small devices. The advantage of this model over classical scaling techniques is shown not only at the device level but also on the simulation of an active Voltage Controlled Reactance.

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