A fully CAD consistent model of MESFETs and HEMTs

Valkov, Stéphane ; Pouvil, Pierre ; Temcamani, Farid ; Leblanc, Rémy (1998) A fully CAD consistent model of MESFETs and HEMTs. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.
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Abstract

An empirical large-signal model of MESFETs and HEMTs has been developed which ensures the full charge conservation, numerical stability and small-signal consistency during computer-aided simulations. For a maximum of accuracy, the charges are directly extracted from the raw gradient experimental data and represented by optimized polynomial functions. The model is valid in reverse operation of the device too. It has been verified for a 0.5 un gate length, 2 x 50 um and 4 x 50 um gate width PHEMTs and implemented into the Hewlett-Packard's MDS software.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Valkov, Stéphane
Pouvil, Pierre
Temcamani, Farid
Leblanc, Rémy
Settori scientifico-disciplinari
DOI
Data di deposito
16 Feb 2006
Ultima modifica
17 Feb 2016 14:34
URI

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