A Ka-band high power monolithic HEMT VCO using a sub-resonator circuit with phase control architecture

Kashiwa, Takuo ; Katoh, Takayuki ; Ishida, Takao ; Kurusu, Hitoshi ; Mitsui, Yasuo (1998) A Ka-band high power monolithic HEMT VCO using a sub-resonator circuit with phase control architecture. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.
Full text disponibile come:
[thumbnail of GAAS_98_080.pdf]
Anteprima
Documento PDF
Download (1MB) | Anteprima

Abstract

This paper reports on a high output performance of a Ka-band monolithic HEMT Voltage Controlled Oscillator(VCO). This VCO has a sub-resonator in order to avoid reduction in Q-factor of a resonator. Circuit elements of the sub-resonator are optimized to achieve a wide tuning range as well as high output power and low phase noise performances. In addition, an AlGaAs/InGaAs double-hetero struc­ture High Electron Mobility Transistor(HEMT) is employed in the VCO to obtain a high output per­formance. A high output power of 19.4 dBm has been achieved at an oscillation frequency of 36.2 GHz. This performance has been achieved without any buffer amplifiers. A tuning range of more than 2.5 GHz is also obtained with a stable high output power. To our knowledge, this represents the high­est output power of monolithic VCO without any buffer amplifiers.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Kashiwa, Takuo
Katoh, Takayuki
Ishida, Takao
Kurusu, Hitoshi
Mitsui, Yasuo
Settori scientifico-disciplinari
DOI
Data di deposito
16 Feb 2006
Ultima modifica
17 Feb 2016 14:35
URI

Altri metadati

Statistica sui download

Statistica sui download

Gestione del documento: Visualizza il documento

^