A Ka-band high power monolithic HEMT VCO using a sub-resonator circuit with phase control architecture

Kashiwa, Takuo ; Katoh, Takayuki ; Ishida, Takao ; Kurusu, Hitoshi ; Mitsui, Yasuo (1998) A Ka-band high power monolithic HEMT VCO using a sub-resonator circuit with phase control architecture. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.
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Abstract

This paper reports on a high output performance of a Ka-band monolithic HEMT Voltage Controlled Oscillator(VCO). This VCO has a sub-resonator in order to avoid reduction in Q-factor of a resonator. Circuit elements of the sub-resonator are optimized to achieve a wide tuning range as well as high output power and low phase noise performances. In addition, an AlGaAs/InGaAs double-hetero struc­ture High Electron Mobility Transistor(HEMT) is employed in the VCO to obtain a high output per­formance. A high output power of 19.4 dBm has been achieved at an oscillation frequency of 36.2 GHz. This performance has been achieved without any buffer amplifiers. A tuning range of more than 2.5 GHz is also obtained with a stable high output power. To our knowledge, this represents the high­est output power of monolithic VCO without any buffer amplifiers.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Kashiwa, Takuo
Katoh, Takayuki
Ishida, Takao
Kurusu, Hitoshi
Mitsui, Yasuo
Subjects
DOI
Deposit date
16 Feb 2006
Last modified
17 Feb 2016 14:35
URI

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