Physical mechanisms limiting the manufacturing yield of millimeter-wave power InP HEMTs

Krupenin, S. ; Blanchard, R. R. ; Somerville, M. H. ; del Alamo, J. A. ; Duh, K. G. ; Chao, P. C. (1998) Physical mechanisms limiting the manufacturing yield of millimeter-wave power InP HEMTs. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.
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Abstract

We have developed a methodology to diagnose the physical mechanisms limiting the manufacturing yield of millimeter-wave power InAlAs/InGaAs HEMTs on InP. A statistical analysis was carried out on DC figures of merit obtained from a large number of actual devices on an experimental wafer. Correlation studies and a Principal Component Analysis (PCA) of the results indicated that variations in Si delta-doping concentration introduced during MBE accounted for more than half of the manufacturing variance. Variations in the gate-source distance that is determined by the electron-beam alignment in the gate formation process were the second leading source of manufacturing variance.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Krupenin, S.
Blanchard, R. R.
Somerville, M. H.
del Alamo, J. A.
Duh, K. G.
Chao, P. C.
Subjects
DOI
Deposit date
16 Feb 2006
Last modified
17 Feb 2016 14:35
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