Krupenin, S. ; Blanchard, R. R. ; Somerville, M. H. ; del Alamo, J. A. ; Duh, K. G. ; Chao, P. C.
(1998)
Physical mechanisms limiting the manufacturing yield of millimeter-wave power InP HEMTs.
In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.
Full text available as:
Preview |
PDF
Download (2MB) | Preview |
Abstract
We have developed a methodology to diagnose the physical mechanisms limiting the manufacturing yield of millimeter-wave power InAlAs/InGaAs HEMTs on InP. A statistical analysis was carried out on DC figures of merit obtained from a large number of actual devices on an experimental wafer. Correlation studies and a Principal Component Analysis (PCA) of the results indicated that variations in Si delta-doping concentration introduced during MBE accounted for more than half of the manufacturing variance. Variations in the gate-source distance that is determined by the electron-beam alignment in the gate formation process were the second leading source of manufacturing variance.
Abstract