Real-time measurement of InP HEMT'S during large-signal RF overdrive stress

Schreurs, D. ; van der Zanden, K. ; Verspecht, J. ; De Raedt, W. ; Nauwelaers, B. (1998) Real-time measurement of InP HEMT'S during large-signal RF overdrive stress. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

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Abstract

We show that the "Nonlinear Network Measurement System" allows to accurately measure the real-time degradation of microwave active devices under large-signal RF overdrive stress. This new kind of measurements gives a better insight in the failure mechanisms. We present results of both off- and on-state degradation of InP based HEMT's.

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