Abstract

A three stages GaAs MMIC power amplifier in MESFET Technology for point to point radio application that delivers an output power greater than 125 mW, with associated gain higher than 19 dB has been developed. The use of bias feed bonding wires as tuning element has been exploited to shorten the design cycle time and to optimize the circuit performance in the desired frequency bandwidth. The device has a power added efficiency greater than 15% at 1 dB of compression in the frequency bandwidth from 21.2 to 23.6 GHz. A pilot test for production has demonstrated the repetitivity of the good performance and the device has been accepted for large volume production after the first design cycle.