Abstract

An electrical and thermal study of submicron GaN permeable base transistors is presented. Carrier transport in the intrinsic finger is studied with a drift-diffusion model, validated against ensemble Monte Carlo simulation. The effects of geometrical scaling are evaluated, in order to optimize the performance of the intrinsic device. Non-isothermal analysis of the complete multi-finger structure demonstrates that, for optimum performance, the heat sink must be placed on the top of the device.