Peniket, N. A. ; Davies, I. ; Davies, R. A. ; Marsh, S. P. ; Wadsworth, S. D. ; Wallis, R. H.
(1998)
An advanced GaAs/lnGaP HBT MMIC process.
In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.
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Abstract
An advanced, general purpose GaAs/lnGaP HBT process has been developed at GEC Marconi Materials Technology Ltd. (GMMT). A range of digital and analogue circuit functions has been successfully implemented, demonstrating the capability of the process to provide high linearity and broadband circuits for communications applications. IP3-P1dB figures of up to 11.3dB have been measured and high density, high speed digital circuits have also been demonstrated with frequency divider toggle rates of over 16GHz. GMMT are also developing a variant of the process with improved breakdown voltage specifically for power applications. This paper gives an overview of the process technology and of demonstrated circuit performance. Results of accelerated lifetests are also presented.
Abstract
An advanced, general purpose GaAs/lnGaP HBT process has been developed at GEC Marconi Materials Technology Ltd. (GMMT). A range of digital and analogue circuit functions has been successfully implemented, demonstrating the capability of the process to provide high linearity and broadband circuits for communications applications. IP3-P1dB figures of up to 11.3dB have been measured and high density, high speed digital circuits have also been demonstrated with frequency divider toggle rates of over 16GHz. GMMT are also developing a variant of the process with improved breakdown voltage specifically for power applications. This paper gives an overview of the process technology and of demonstrated circuit performance. Results of accelerated lifetests are also presented.
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DOI
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16 Feb 2006
Last modified
17 Feb 2016 14:36
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Document type
Conference or Workshop Item
(Paper)
Creators
Subjects
DOI
Deposit date
16 Feb 2006
Last modified
17 Feb 2016 14:36
URI
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