High frequency devices and high speed integrated circuits technology, based on the A3B5-semiconductor compounds, in the republics of the former USSR

Mokerov, V.G. ; Matveev, Yu.A. ; Temnov, A.M. ; Kitaev, M.A. (1998) High frequency devices and high speed integrated circuits technology, based on the A3B5-semiconductor compounds, in the republics of the former USSR. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

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Abstract

The present paper is devoted to a brief analysis of the present state and the prospects for the future of technology of the high frequency devices and high speed integrated circuits based on the A3B5 semiconductor compounds, including the A3B5-heterostructures, in the republics of the former USSR.

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