Implementation of a 2.5Gb/s ATM transceiver in GaAs technology

Esper-Chain, R ; Lassen, P.S. ; Lopez, J.F. ; Sarmiento, R. (1996) Implementation of a 2.5Gb/s ATM transceiver in GaAs technology. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

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Abstract

In this paper we present a 0.6um GaAs MESFET implementation for a 2.5Gb/s ATM transceiver. The good power-delay feature of the technology, gives a power consumption below 5W for the transceiver. Due to the lack of recommendations for 2.5Gb/s ATM physical layer, the work presented uses the existing recommendations given by the ITU-T for 155Mb/s and 622Mb/s.

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