Signal and noise properties of TWFETs (model, concept, and potential)

Abdipour, A. ; Pacaud, A. (1996) Signal and noise properties of TWFETs (model, concept, and potential). In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

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Abstract

We report mm-wave signal and noise performance of a TWFET (Traveling-Wave FET). For the first time a CAD model (with possibility of including temperature dependence) for simultaneous signal and noise performance determination, based on coupled modes theory and full semidistributed modeling [4], is here proposed.

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