Abstract

In this paper it is proposed an automatic procedure to extract optimal layout parameters in order to thermal effect minimization, for a MESFET with conventional structure, according to other design specifications. These parameters are the gate length, the gate width, the number of gates, the gate to gate spacing, the die thickness and the heat sink temperature. The procedure accounts for the dependence of the thermal conductivity of gallium arsenide on temperature and doping density. Moreover the proposed procedure, joined with an I-V and a C-V MESFET thermal model already proposed by the authors is a part of a CAD tool for GaAs I.Cs. design for thermal effect optimization.