An efficient physics-based CAD approach to evaluate the sensitivity of GaAs devices with respect to process parameters

Bonani, F. ; Donati, S. ; Ghione, G. ; Pirola, M. ; Naldi, C.U. (1996) An efficient physics-based CAD approach to evaluate the sensitivity of GaAs devices with respect to process parameters. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

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Abstract

The paper presents an efficient technique for evaluating the DC sensitivity of GaAs monopolar or bipolar devices through a two-carrier drift-diffusion model. The sensitivity analysis is based on the Branin's method for the sensitivity analysis of electrical networks. Numerical results are presented concerning two topics: the behaviour of the distributed sensitivity within MESFET devices and the sensitivity-based statistical MESFET analysis with respect to random variations of the technological parameters, which is the basis of yield-driven device optimization.

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