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van den Bogaart, F.L.M. ; de Hek, A.P. ; de Boer, A.
(1996)
MESFET high-power high-efficiency MMIC amplifiers at X-band with 30% bandwidth.
In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.
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Abstract
A 3-Watt and a 5-Watt high-efficiency high-power amplifier are presented. The amplifiers are manufactured in a GaAs MESFET process. The 3-Watt amplifier exhibits 4 Watt output power at 10.6 GHz with an associated PAE of 43% and more than 3 Watt output power with more than 30% PAE from 8 GHz to 11.3 GHz. The 5-Watt amplifier exhibits 7W output power at 8.8 GHz with an associated PAE of 40% and more than 5 Watt output power with more than 30% PAE from 7.8 GHz to 10.6 GHz.
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