Kwaspen, J.J.M.
(2002)
A Universal Test Set for DC and Pulsed I-V Characterization of Various Semiconductor Devices.
In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
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Abstract
A universal DC and pulsed I-V test set is presented, that allows automated DC-only, pulse-only and DC + pulse measurements on 2 and 3 terminal semiconductor devices, the later ones in 3 selectable common-configurations. Tests can be done on packaged devices and on-wafer; temperature dependency studied and time-depended features like trapping effects in GaN-based HEMTs. Novel is that once the overall test setup is assembled, no external hardware changes are neccesary for a full (automated) characterization of all quadrants of the I-V plot, and that in the pulse mode the V and I sampling point already can be at 8 ns from the leading edge, allowing measurements with very limited average device temperature increase.
Abstract
A universal DC and pulsed I-V test set is presented, that allows automated DC-only, pulse-only and DC + pulse measurements on 2 and 3 terminal semiconductor devices, the later ones in 3 selectable common-configurations. Tests can be done on packaged devices and on-wafer; temperature dependency studied and time-depended features like trapping effects in GaN-based HEMTs. Novel is that once the overall test setup is assembled, no external hardware changes are neccesary for a full (automated) characterization of all quadrants of the I-V plot, and that in the pulse mode the V and I sampling point already can be at 8 ns from the leading edge, allowing measurements with very limited average device temperature increase.
Document type
Conference or Workshop Item
(Poster)
Creators
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:39
URI
Other metadata
Document type
Conference or Workshop Item
(Poster)
Creators
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:39
URI
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