Vashchenko, V.A. ; Martynov, J.B. ; Sinkevitch, V.F. ; Tager, A.S.
(1996)
Current instability and burnout under MESFET gate breakdown.
In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.
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Abstract
The gate burnout (irreversible breakdown) of GaAs MESFET has been studied using two-dimensional (2-D) numerical simulation and experimental measurements of 10 ns pulsed gate-source I-V characteristics. It is shown, that at some critical level of gate avalanche current the gate current instability appears. The instability results in formation of a negative differential conductivity (NDC) region on the S-shape gate-source I-V characteristic, spatial instability of avalanche current and formation of high density current filaments.
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