GaN H-FET development at QinetiQ

Martin, T. ; Uren, M. J. ; Balmer, R.S. ; Soley, D. ; Wallis, D. J. ; Hilton, K. P. ; Maclean, J. O. (2005) GaN H-FET development at QinetiQ. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

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Abstract

The AlGaN/GaN HFET project at QinetiQ has the capability to grow high quality layers using MOVPE, fabricate HFETs with 0.8 and 0.25µm gate length and fabricate amplifiers. Here we present recent work on topics as diverse as X-ray determination of aluminium concentration, 0.25Ohm.mm Ohmic contacts, measurement of saturated velocity, current slump and a 57W hybrid amplifier.

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