High power/High bandwidth GaN MMICs and hybrid amplifiers: design and characterization

van Raay, F. ; Quay, R. ; Kiefer, R. ; Walcher, H. ; Kappeler, O. ; Seelmann-Eggebert, M. ; Müller, S. ; Schlechtweg, M. ; Weimann, G. (2005) High power/High bandwidth GaN MMICs and hybrid amplifiers: design and characterization. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

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Abstract

Broadband microstrip and coplanar MMIC amplifiers featuring beyond 10W for X-band radar applications are realized in a AlGaN/GaN HEMT technology on 2" s.i. SiC substrate. Single-stage and dualstage demonstrators with flat gain from 1 GHz to 2.7 GHz and up to 40 W peak power in hybrid microstrip technology for basestation applications are presented. The performance illustrates the potential of this technology with very high bandwidth and superior power density in comparison to GaAs.

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