Ing Ng, Geok ; Radhakrishnan, K. ; Wang, Hong
(2005)
Are We There Yet ? – A Metamorphic HEMT
and HBT Perspective.
In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract
Metamorphic epitaxy technique offers the possibility of combining the advantages of low-cost and manufacturability of GaAs substrates and the high performance of InP-based devices. This paper will present the recent development of metamorphic HEMTs and HBTs and discuss their readiness for commercialization.
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